RESIDUAL STRAINS IN AMORPHOUS-SILICON FILMS MEASURED BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY

被引：31
|
作者：
KUO, CL [1 ]
VANIER, PE [1 ]
BILELLO, JC [1 ]
机构：
[1] BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.333083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：375 / 377
页数：3
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