SURFACE ROUGHENING DURING DEPTH PROFILING BY SECONDARY ION MASS-SPECTROMETRY (SIMS) IN GAALAS AND GAAS

被引：7
|
作者：
GERICKE, M
LILL, T
TRAPP, M
RICHTER, CE
HUPFER, A
机构：
[1] SIMS-Labor im Werk für Fernsehelektronik GmbH, Berlin, O-1160
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1991年 / 341卷 / 1-2期
关键词：
D O I：
10.1007/BF00322102
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
During bombardment of Ga1-xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which is essentially deeper than the penetration depth of the primary ions. Using oxygen and cesium as primary ions 'varying' energy and angle of incidence, residual gas pressure and matrix composition their effects on the phenomena were investigated. Although some remarkable properties of the sample modification process could be found, no theoretical description can be given up to now.
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页码：31 / 34
页数：4
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