ENHANCEMENT MODE N-CHANNEL SI/SIGE MODFET WITH HIGH INTRINSIC TRANSCONDUCTANCE

被引：71

作者：

KONIG, U

BOERS, AJ

SCHAFFLER, F

KASPER, E

机构：

[1] Daimler-Benz AG, Research Center, 7900 Ulm

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

n-channel Si/SiGe MODFETs with quantum wells grown on a thick (1.5-mu-m) graded buffer (Ge 5-30%) are realised. MODFETs with a surface gate work in the depletion mode due to a large gate-to-2-DEG channel distance of 75 nm. MODFETs with a recessed gate 10-15 nm above the channel exhibit enhancement mode operation with significantly high extrinsic transconductances of 340 mS/mm or 670 mS/mm at 300 K or 77 K and corresponding intrinsic transconductances of 380 mS/mm or 800 mS/mm. The performance indicates the improved layer quality on graded buffers.

引用

页码：160 / 162

页数：3

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