PHOTOLUMINESCENCE STUDY OF INXAL1-XAS-GAAS STRAINED-LAYER SUPERLATTICES

被引:55
|
作者
KATO, H
IGUCHI, N
CHIKA, S
NAKAYAMA, M
SANO, N
机构
[1] Kwansei Gakuin Univ, Nishinomiya, Jpn, Kwansei Gakuin Univ, Nishinomiya, Jpn
关键词
D O I
10.1063/1.336617
中图分类号
O59 [应用物理学];
学科分类号
摘要
22
引用
收藏
页码:588 / 592
页数:5
相关论文
共 50 条
  • [41] STRUCTURE DEPENDENCE OF PHOTOLUMINESCENCE IN GEN/SIM STRAINED-LAYER SUPERLATTICES
    MIKI, K
    OKUMURA, H
    SAKAMOTO, K
    MATSUHATA, H
    SAKAMOTO, T
    YOSHIDA, S
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 902 - 906
  • [42] HYDROSTATIC-PRESSURE COEFFICIENTS OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM-WELLS
    WILKINSON, VA
    PRINS, AD
    LAMBKIN, JD
    OREILLY, EP
    DUNSTAN, DJ
    HOWARD, LK
    EMENY, MT
    PHYSICAL REVIEW B, 1990, 42 (05): : 3113 - 3119
  • [43] PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF INXGA1-XAS/GAAS STRAINED-LAYER COUPLED DOUBLE QUANTUM-WELLS
    XU, Q
    XU, ZY
    XU, JZ
    ZHENG, BZ
    XIA, H
    SOLID STATE COMMUNICATIONS, 1990, 73 (12) : 813 - 816
  • [44] STUDY OF INGAAS-GAAS STRAINED-LAYER SUPERLATTICES BY TEM AND RBS TECHNIQUES
    LENKEIT, K
    GUTAKOVSKII, AK
    KANTER, YO
    FLAGMEYER, R
    PINTUS, SM
    RUBANOV, SV
    FEDOROV, AA
    POPOV, VP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 115 (02): : 413 - 425
  • [45] MINIBAND DISPERSION IN (IN,GA)AS-GAAS STRAINED-LAYER SUPERLATTICES
    MOORE, KJ
    DUGGAN, G
    RAUKEMA, A
    WOODBRIDGE, K
    PHYSICAL REVIEW B, 1990, 42 (02) : 1326 - 1331
  • [46] GROWTH AND CHARACTERIZATION OF INAS/IN1-XALXAS STRAINED-LAYER SUPERLATTICES ON GAAS
    KATO, H
    IGUCHI, N
    KAMIGAKI, K
    CHIKA, S
    NAKAYAMA, M
    SANO, N
    TERAUCHI, H
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 2057 - 2061
  • [47] OPTICAL-PROPERTIES OF GAAS/GAP STRAINED-LAYER SUPERLATTICES
    RECIO, M
    ARMELLES, G
    MELENDEZ, J
    BRIONES, F
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 2044 - 2050
  • [48] Photoluminescence study in step-graded composition InxAl1-xAs/GaAs
    Yahyaoui, N.
    Aloulou, S.
    Chtourou, R.
    Sfaxi, A.
    Oueslati, M.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 292 - 295
  • [49] Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE
    Qi, Ming
    Luo, Jinsheng
    Shirakashi, J.
    Yamada, T.
    Nozaki, S.
    Tadahashi, K.
    Kashima, H.
    Tokumitsu, E.
    Konagai, M.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (08): : 462 - 467
  • [50] STRAINED-LAYER SEMICONDUCTOR SUPERLATTICES
    MAILHIOT, C
    SMITH, DL
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (02) : 131 - 160