GRAIN-GROWTH MECHANISM IN HEAVILY ARSENIC-DOPED POLYCRYSTALLINE SILICON

被引：3
|
作者：
KALAINATHAN, S
DHANASEKARAN, R
RAMASAMY, P
机构：
[1] Crystal Growth Centre, Anna University
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1991年 / 2卷 / 02期
关键词：
D O I：
10.1007/BF00694759
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The mechanism of grain growth in heavily arsenic-doped polycrystalline silicon has been investigated by developing a kinetic model. A computer simulation technique has been used to determine the grain boundary self-diffusion of the silicon atoms and hence the grain size for different arsenic concentrations, annealing times and temperatures has been estimated. The evaluated numerical values are compared with the available experimental values. Using this model the grain size distribution in arsenic-doped polysilicon for various values of arsenic concentration, annealing time and temperature has been determined. The results are discussed in detail.
引用
收藏
页码：98 / 104
页数：7
相关论文
共 50 条
  • [31] ENHANCED GRAIN-GROWTH OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON BY TITANIUM SILICIDE FORMATION
    CHOU, TC
    WONG, CY
    TU, KN
    APPLIED PHYSICS LETTERS, 1986, 49 (20) : 1381 - 1383
  • [32] OBSERVATIONS ON INTERFACIAL SEGREGATION AND PRECIPITATION OF ARSENIC-DOPED POLYCRYSTALLINE SILICON ON SILICON (100) SUBSTRATE
    TUNG, CH
    LEE, KY
    DENG, RC
    LEE, LS
    APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1197 - 1199
  • [33] LOW-TEMPERATURE ANNEALING CHARACTERISTICS OF THE LIGHTLY ARSENIC-DOPED POLYCRYSTALLINE SILICON
    YANG, CS
    APPLIED PHYSICS LETTERS, 1987, 51 (02) : 112 - 114
  • [34] HEAVILY ARSENIC-DOPED SILICON EPITAXIAL-FILMS GROWN BY PARTIALLY IONIZED MBE
    SUGIYAMA, T
    ITOH, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 604 - 609
  • [35] Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers
    Yuan, Kang
    Sun, Yuxin
    Lu, Yunhao
    Liang, Xingbo
    Tian, Daxi
    Ma, Xiangyang
    Yang, Deren
    AIP ADVANCES, 2018, 8 (04):
  • [36] Characterization of electrically inactive arsenic atoms in heavily arsenic-doped Si
    Kikuchi, Y
    Goto, Y
    SURFACE AND INTERFACE ANALYSIS, 2005, 37 (02) : 201 - 203
  • [37] COMPENSATION OF GRAIN-GROWTH ENHANCEMENT IN DOPED SILICON FILMS
    KIM, HJ
    THOMPSON, CV
    APPLIED PHYSICS LETTERS, 1986, 48 (06) : 399 - 401
  • [38] GRAIN-BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC
    CARABELAS, A
    NOBILI, D
    SOLMI, S
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 187 - 192
  • [39] ANNEALING EXPERIMENTS IN HEAVILY ARSENIC-DOPED (HG,CD)TE
    VYDYANATH, HR
    LICHTMANN, LS
    SIVANANTHAN, S
    WIJEWARNASURIYA, PS
    FAURIE, JP
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (05) : 625 - 634
  • [40] DIFFUSION INTO SILICON FROM AN ARSENIC-DOPED OXIDE
    LEE, DB
    SOLID-STATE ELECTRONICS, 1967, 10 (06) : 623 - &
12345