GRAIN-GROWTH MECHANISM IN HEAVILY ARSENIC-DOPED POLYCRYSTALLINE SILICON

被引：3
|
作者：
KALAINATHAN, S
DHANASEKARAN, R
RAMASAMY, P
机构：
[1] Crystal Growth Centre, Anna University
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1991年 / 2卷 / 02期
关键词：
D O I：
10.1007/BF00694759
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The mechanism of grain growth in heavily arsenic-doped polycrystalline silicon has been investigated by developing a kinetic model. A computer simulation technique has been used to determine the grain boundary self-diffusion of the silicon atoms and hence the grain size for different arsenic concentrations, annealing times and temperatures has been estimated. The evaluated numerical values are compared with the available experimental values. Using this model the grain size distribution in arsenic-doped polysilicon for various values of arsenic concentration, annealing time and temperature has been determined. The results are discussed in detail.
引用
收藏
页码：98 / 104
页数：7
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