AN EXPERIMENTAL COMPARISON OF MEASUREMENT TECHNIQUES TO EXTRACT SI-SIO2 INTERFACE TRAP DENSITY

For the first time, five methods of measuring Si-SiO2 interface trap densities were compared experimentally on three otherwise identical MOSFETs which were radiation-stressed so as to induce different levels of interface trap densities. The results show that when sources of error and limitations are taken into account, these methods are capable of yielding interface trap density estimates which are in good quantitative agreement. Furthermore, the change in measured interface trap densities with radiation is independent of the method used. A comprehensive review of the methods is presented.