LEAKAGE MECHANISMS IN THE HEAVILY DOPED GATED DIODE STRUCTURES

被引：0
|
作者：
HAN, CH
KIM, K
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A leakage current model is presented which shows very good agreement with reported experimental results on gated diode structures with today's ULSI dimensions. The leakage current is modeled as the Shockley-Read-Hall (SRH) generation current, enhanced by the Poole-Frenkel (P-F) effect and trap-assisted tunneling. The model shows very good agreement on gate voltage, temperature, and oxide thickness dependence for normal operating voltage range. It is found from the model that the doping range from 2 x 10(18) to 1 x 10(19) cm-3 gives the most significant degradation to the leakage characteristics in trench-type DRAM cells and the drain of MOSFET's.
引用
收藏
页码：74 / 76
页数：3
相关论文
共 50 条
  • [41] Voltage-gated potassium channels KCNQs: Structures, mechanisms, and modulations
    Huang, Yuan
    Ma, Demin
    Yang, Zhenni
    Zhao, Yiwen
    Guo, Jiangtao
    BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, 2023, 689
  • [42] Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures
    Zheng, Dawei
    Liu, Fayang
    Zhou, Jitong
    Li, Guijun
    Zhou, Xianda
    Zhang, Shengdong
    Lu, Lei
    APPLIED PHYSICS LETTERS, 2022, 121 (13)
  • [43] Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor
    V. A. Romaka
    P. Rogl
    V. V. Romaka
    D. Kaczorowski
    Yu. V. Stadnyk
    V. Ya. Krayovskyy
    A. M. Horyn
    Semiconductors, 2016, 50 : 860 - 868
  • [44] Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors
    V. A. Romaka
    M. G. Shelyapina
    Yu. K. Gorelenko
    D. Fruchart
    Yu. V. Stadnyk
    L. P. Romaka
    V. F. Chekurin
    Semiconductors, 2006, 40 : 655 - 661
  • [45] INVESTIGATION OF THE MECHANISMS OF LOCAL AMORPHIZATION IN A HEAVILY DOPED CRYSTALLINE SEMICONDUCTOR n-TiNiSn
    Romaka, V. A.
    Stadnyk, Yu. V.
    Fruchart, D.
    Romaka, V. V.
    Rogl, P.
    Davydov, V. M.
    Gorelenko, Yu. K.
    Goryn, A. M.
    UKRAINIAN JOURNAL OF PHYSICS, 2008, 53 (01): : 42 - 49
  • [46] Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures
    Zhou, Chunhua
    Jiang, Qimeng
    Huang, Sen
    Chen, Kevin J.
    2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012, : 245 - 248
  • [47] Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y
    Romaka, V. A.
    Rogl, P.
    Romaka, V. V.
    Kaczorowski, D.
    Krayovskyy, V. Ya.
    Stadnyk, Yu. V.
    Horyn, A. M.
    SEMICONDUCTORS, 2017, 51 (02) : 139 - 145
  • [48] Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors
    Romaka, V. A.
    Shelyapina, M. G.
    Gorelenko, Yu. K.
    Fruchart, D.
    Stadnyk, Yu. V.
    Romaka, L. P.
    Chekurin, V. F.
    SEMICONDUCTORS, 2006, 40 (06) : 655 - 661
  • [49] Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers
    Tilak, Vinayak
    Matocha, Kevin
    Dunne, Greg
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (11) : 2823 - 2829
  • [50] Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y
    V. A. Romaka
    P. Rogl
    V. V. Romaka
    D. Kaczorowski
    V. Ya. Krayovskyy
    Yu. V. Stadnyk
    A. M. Horyn
    Semiconductors, 2017, 51 : 139 - 145
12345