Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Structures

被引：0

作者：

Zhou, Chunhua ^{[1
]}

Jiang, Qimeng ^{[1
]}

Huang, Sen ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

AlGaN/GaN-on-Si structures; vertical leakage and breakdown; space-charge-limited current conduction; acceptor level; donor level; CHARGE-LIMITED CURRENTS; CURRENT COLLAPSE; BUFFER; TRAPS; HEMTS; SILICON;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we studied the vertical leakage/breakdown mechanisms in AlGaN/GaN structures grown on low resistivity p-type (111) Si substrate by temperature-dependent current-voltage measurements. We suggested that the top-to-substrate vertical leakage/breakdown is dominated by the space-charge-limited current (SCLC) conduction mechanism involving both acceptor and donor traps in buffer/transition layer. Based on temperature-dependent transient backgating measurements, the acceptor level and donor level were determined to be at E-V+543 meV and E-C-616 meV, respectively.

引用

页码：245 / 248

页数：4

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