EXCIMER-LASER-INDUCED ETCHING OF SILICON IN CHLORINE ATMOSPHERE AT A WAVELENGTH OF 248-NM

被引：5
|
作者：
JIANG, W [1 ]
BAUMGARTNER, H [1 ]
EISELE, I [1 ]
机构：
[1] UNIV MUNICH,FAK ELEKTROTECH,INST PHYS,D-85577 MUNICH,GERMANY
来源：
APPLIED SURFACE SCIENCE | 1995年 / 86卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(94)00440-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The etching behaviour of silicon in chlorine atmosphere assisted by laser radiation at 248 nm has been studied as a function of laser fluence and gas pressure. Different process regions have been determined. The crystalline quality and the surface morphology and roughness have been investigated by transmission electron microscopy and secondary ion mass spectroscopy.
引用
收藏
页码：564 / 567
页数：4
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