ELECTRON TRAP STATES AND LOW-FREQUENCY NOISE IN TUNNEL-JUNCTIONS

被引:27
|
作者
ROGERS, CT [1 ]
BUHRMAN, RA [1 ]
GALLAGHER, WJ [1 ]
RAIDER, SI [1 ]
KLEINSASSER, AW [1 ]
SANDSTROM, RL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1109/TMAG.1987.1064840
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1658 / 1661
页数:4
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