ELECTRON TRAP STATES AND LOW-FREQUENCY NOISE IN TUNNEL-JUNCTIONS

被引：27
|
作者：
ROGERS, CT [1 ]
BUHRMAN, RA [1 ]
GALLAGHER, WJ [1 ]
RAIDER, SI [1 ]
KLEINSASSER, AW [1 ]
SANDSTROM, RL [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期
关键词：
D O I：
10.1109/TMAG.1987.1064840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1658 / 1661
页数：4
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