Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs

被引：0

作者：

Bhartiat, Mini ^{[1
]}

Chatterjeet, Arun Kumar ^{[1
]}

机构：

[1] Thapar Inst Engn & Technol, Elect & Commun cat Dept, Patiala, Punjab, India

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 04期

关键词：

double gate MOSFET; 2D potential distribution model; drain current model;

D O I：

10.1088/1674-4926/36/4/044003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOSFET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO ( Atlas) tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of symmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.

引用

页数：7

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