INTERFACE STRUCTURE OF GE/SI(111) DURING SOLID-PHASE EPITAXY STUDIED BY MEDIUM-ENERGY ION-SCATTERING

被引：21
|
作者：
SUMITOMO, K
NISHIOKA, T
SHIMIZU, N
SHINODA, Y
OGINO, T
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 02期
关键词：
D O I：
10.1116/1.579412
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：289 / 294
页数：6
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