GROWTH MECHANISMS OF DIAMOND CRYSTALS AND FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引:5
|
作者
BONNOT, AM
MATHIS, BS
MERCIER, J
LEROY, J
VITTON, JP
机构
[1] CNRS, ETUD PROPRIETES ELECTR SOLIDES LAB, F-38042 GRENOBLE, FRANCE
[2] CTR RECH TECHNOL KODAK, SCI MAT LAB, ZI NORD, F-71102 CHALON SUR SAONE, FRANCE
关键词
D O I
10.1016/0925-9635(92)90030-R
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond crystals and films were prepared either by hot-filament-assisted or microwave-plasma-assisted CVD techniques. Depending on the technique used and on the synthesis parameters, modifications of diamond crystal habit were observed and are analyzed by considering the growth mechanisms of (111) and (100) faces. Consequently, film surfaces with either predominantly (111) faces or only (100) faces were obtained. Effects of surface reconstruction, defect inclusions and etching are considered in view of modifying the relative 〈111〉 and 〈100〉 growth rates and thus the crystal and film surface morphologies. © 1992.
引用
收藏
页码:230 / 234
页数:5
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