PHOTON-INDUCED TRANSPORT OF IMPURITIES IN SEMICONDUCTORS

A theory of photon-induced transport of impurity ions in semiconductors is proposed. Our consideration is based on the photon-induced over-the-barrier transition of the bound ion from the ground localized state into its Bloch states in the host lattice. Migration of photoexcited ions in the continuous-states band is studied including its interaction with the host-lattice phonons. Expressions for both photon-induced ionic diffusion and conductivity are obtained in the quasi-classical approximation. Estimations of the predicted transport with the isotropic-effect analysis are made for interstitial hydrogen ions H+ in p-type silicon at low temperatures.