PHOTON-INDUCED TRANSPORT OF IMPURITIES IN SEMICONDUCTORS

被引：1
|
作者：
AGAFONOV, AI
机构：
[1] Institute of Physics and Technology, Russian Academy of Sciences, Moscow
来源：
PHYSICA B | 1993年 / 191卷 / 3-4期
关键词：
D O I：
10.1016/0921-4526(93)90096-O
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A theory of photon-induced transport of impurity ions in semiconductors is proposed. Our consideration is based on the photon-induced over-the-barrier transition of the bound ion from the ground localized state into its Bloch states in the host lattice. Migration of photoexcited ions in the continuous-states band is studied including its interaction with the host-lattice phonons. Expressions for both photon-induced ionic diffusion and conductivity are obtained in the quasi-classical approximation. Estimations of the predicted transport with the isotropic-effect analysis are made for interstitial hydrogen ions H+ in p-type silicon at low temperatures.
引用
收藏
页码：355 / 361
页数：7
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