DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR

被引：128
|
作者：
MIYAZAWA, S
ISHII, Y
ISHIDA, S
NANISHI, Y
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期
关键词：
D O I：
10.1063/1.94526
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：853 / 855
页数：3
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