PERTURBED ANGULAR-CORRELATION STUDIES OF DOPANT ATOM INTERACTIONS IN SILICON

被引:37
|
作者
WICHERT, T [1 ]
SWANSON, ML [1 ]
机构
[1] UNIV N CAROLINA, DEPT PHYS & ASTRON, CHAPEL HILL, NC 27599 USA
关键词
D O I
10.1063/1.344188
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:3026 / 3037
页数:12
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