PERTURBED ANGULAR-CORRELATION STUDIES OF DOPANT ATOM INTERACTIONS IN SILICON

被引：37
|
作者：
WICHERT, T [1 ]
SWANSON, ML [1 ]
机构：
[1] UNIV N CAROLINA, DEPT PHYS & ASTRON, CHAPEL HILL, NC 27599 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期
关键词：
D O I：
10.1063/1.344188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3026 / 3037
页数：12
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