SOME ADVANCED MICROWAVE TECHNIQUES FOR THE INVESTIGATION OF DEFECT STATES IN SEMICONDUCTORS

被引：6
|
作者：
JANTSCH, W
机构：
来源：
PHYSICA SCRIPTA | 1989年 / T25卷
关键词：
D O I：
10.1088/0031-8949/1989/T25/061
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：336 / 341
页数：6
相关论文
共 50 条
  • [1] CHARACTERIZATION OF DEFECT CENTERS IN SEMICONDUCTORS BY ADVANCED ENDOR TECHNIQUES
    GREGORKIEWICZ, T
    ALTINK, HE
    AMMERLAAN, CAJ
    [J]. ACTA PHYSICA POLONICA A, 1991, 80 (02) : 161 - 170
  • [2] MICROWAVE TECHNIQUES IN STUDY OF SEMICONDUCTORS
    BHAR, JN
    [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1623 - &
  • [3] MICROWAVE TECHNIQUES IN STUDY OF SEMICONDUCTORS
    CHAMPLIN, KS
    BHAR, JN
    [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (10) : 1247 - &
  • [4] Microwave photoconductivity techniques for the characterization of semiconductors
    Citarella, G
    von Aichberger, S
    Kunst, M
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 224 - 228
  • [5] MICROWAVE CONDUCTIVITY STUDIES ON SOME SEMICONDUCTORS
    SUBRAMANIAN, V
    MURTHY, VRK
    SOBHANADRI, J
    [J]. PRAMANA-JOURNAL OF PHYSICS, 1995, 44 (01): : 19 - 32
  • [6] DEFECT STATES DOMINATED BY LOCALIZED POTENTIALS IN SEMICONDUCTORS
    BRAND, S
    JAROS, M
    RODRIGUEZ, CO
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (09): : 1243 - 1253
  • [7] ADVANCED TECHNIQUES FOR MICROWAVE REFLECTOMETRY
    SANCHEZ, J
    BRANAS, B
    DELALUNA, E
    ESTRADA, T
    ZHURAVLEV, V
    HARTFUSS, HJ
    HIRSCH, M
    GEIST, T
    SEGOVIA, J
    ORAMAS, JL
    [J]. PLASMA PHYSICS REPORTS, 1994, 20 (01) : 1 - 6
  • [8] INVESTIGATION OF HYDROGEN IN SEMICONDUCTORS BY NUCLEAR TECHNIQUES
    DEICHER, M
    KELLER, R
    PFEIFFER, W
    SKUDLIK, H
    WICHERT, T
    [J]. PHYSICA B-CONDENSED MATTER, 1991, 170 (1-4) : 335 - 350
  • [9] A CALCULATION OF DEFECT GAP STATES ON THE CLEAN (110) SURFACES OF SOME III-V SEMICONDUCTORS
    LOHEZ, D
    LANNOO, M
    MASRI, P
    SOONCKINDT, L
    LASSABATERE, L
    [J]. SURFACE SCIENCE, 1980, 99 (01) : 132 - 137
  • [10] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS
    BEBB, HB
    CHAPMAN, RA
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &
12345