MICROWAVE CONDUCTIVITY STUDIES ON SOME SEMICONDUCTORS

被引：7
|
作者：
SUBRAMANIAN, V
MURTHY, VRK
SOBHANADRI, J
机构：
[1] Department of Physics, Indian Institute of Technology, Madras
来源：
PRAMANA-JOURNAL OF PHYSICS | 1995年 / 44卷 / 01期
关键词：
CAVITY PERTURBATION TECHNIQUE; SILICON; MICROWAVE CONDUCTIVITY; MOMENTUM RELAXATION TIME;
D O I：
10.1007/BF02898209
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The cavity perturbation technique is employed for the characterisation of semiconductors at microwave frequency for its conductivity. Temperature variation of microwave conductivity studies provide the information regarding the band gap, scattering parameter and impurity ionization energy. Change in the real part of the dielectric permittivity with conductivity indicates the change in the momentum relaxation time.
引用
收藏
页码：19 / 32
页数：14
相关论文
共 50 条
12345