共 50 条
- [1] CONDUCTIVITY OF P-TYPE ZNSIAS2 CRYSTALS IN REGION OF HIGH-TEMPERATURES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (02): : K153 - K156
- [2] THERMOELECTRIC-POWER OF STRONGLY COMPENSATED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1502 - 1503
- [3] THERMOELECTRIC-POWER OF P-TYPE HGMNTE IN A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (02): : 195 - 199
- [4] THERMOELECTRIC-POWER OF SINGLE-CRYSTAL P-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 697 - 698
- [5] EFFECTIVE MASS OF HOLES IN P-TYPE AIIIBV COMPOUNDS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02): : 417 - 425
- [6] INFLUENCE OF UNIAXIAL PRESSURE ON THE DRAG THERMOELECTRIC-POWER OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 882 - 884
- [7] ANALYSIS OF THERMOELECTRIC-POWER IN P-TYPE PB1-XSNX TE DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1979, 32 (03): : 293 - 296
- [8] OPTICAL EFFECTIVE MASS OF HOLES IN P-TYPE AIIIBV COMPOUNDS PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 62 (02): : 351 - 359
- [9] ELECTRICAL PROPERTIES AND PHOTOCONDUCTIVITY OF ZNSIAS2 CRYSTALS OF TYPE DOKLADY AKADEMII NAUK SSSR, 1974, 216 (01): : 56 - 58
- [10] THERMOELECTRIC POWER OF P-TYPE INP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1159 - +