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- [3] THERMOELECTRIC-POWER PTS SINGLE-CRYSTAL AT LOW-TEMPERATURES CHINESE PHYSICS, 1985, 5 (04): : 1017 - 1018
- [4] THERMOELECTRIC-POWER OF P-TYPE HGMNTE IN A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (02): : 195 - 199
- [7] Analysis of characteristics of porous silicon layers obtained on the p-type single-crystal silicon Journal of Contemporary Physics (Armenian Academy of Sciences), 2012, 47 : 133 - 136
- [8] INFLUENCE OF UNIAXIAL PRESSURE ON THE DRAG THERMOELECTRIC-POWER OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 882 - 884
- [9] THERMOELECTRIC-POWER AND EFFECTIVE MASS OF HOLES IN P-TYPE ZNSIAS2 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1447 - 1448
- [10] ANALYSIS OF THERMOELECTRIC-POWER IN P-TYPE PB1-XSNX TE DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1979, 32 (03): : 293 - 296