共 50 条
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- [2] THERMOELECTRIC-POWER AND EFFECTIVE MASS OF HOLES IN P-TYPE ZNSIAS2 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1447 - 1448
- [3] INVESTIGATION OF THE OPTICAL COOLING AND HEATING OF HOLES IN P-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 266 - 270
- [4] AUGER RECOMBINATION IN P-TYPE SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASSES OF ELECTRONS AND HOLES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (09): : 125 - 127
- [5] Optical emission related to holes confined in p-type δ-doped layers in GaAs OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 123 - 128
- [6] ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON ZEITSCHRIFT FUR PHYSIK, 1968, 212 (02): : 183 - +
- [7] MASS-SPECTROMETRY OF EVAPORATION OF AIIIBV-TYPE SEMICONDUCTOR COMPOUNDS BY OPTICAL QUANTUM GENERATOR RADIATION ZHURNAL TEKHNICHESKOI FIZIKI, 1972, 42 (03): : 670 - &
- [9] TRANSPORT PROPERTIES OF HOLES IN A P-TYPE DIAMOND BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 353 - 353
- [10] TEMPERATURE DEPENDENCES OF OPTICAL EFFECTIVE MASS OF HOLES IN P-INSB AND P-GAAS PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 55 (02): : K139 - K141