MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE AND HGCDTE ON SI (100)

被引：96
|
作者：
SPORKEN, R
SIVANANTHAN, S
MAHAVADI, KK
MONFROY, G
BOUKERCHE, M
FAURIE, JP
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期
关键词：
D O I：
10.1063/1.102159
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1879 / 1881
页数：3
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