SOI MOSFET IN WEAK INVERSION AND WEAK ACCUMULATION

被引：4
|
作者：
BALESTRA, F
BRINI, J
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 05期
关键词：
D O I：
10.1049/el:19870149
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：211 / 213
页数：3
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