WEAK INVERSION CHARGE INJECTION IN ANALOG MOS SWITCHES

被引:14
|
作者
CHEN, MJ
GU, YB
WU, T
HSU, PC
LIU, TH
机构
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN
[2] ELECTR RES & SERV ORG ITRI,DEPT MIXED MODE INTEGRATED CIRCUITS,HSINCHU 300,TAIWAN
关键词
D O I
10.1109/4.384177
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The on chip test circuit for examining the charge injection in analog MOS switches has been described in detail, and has been fabricated and characterized. Mixed-mode circuit and device simulations have been performed, creating excellent agreements not only with the experimental waveforms but also with the measured switch-induced error voltage, Further investigation of the experimental and simulated results has separated the charge injection into three distinct components: i) the channel charges in strong inversion; ii) the channel charges in weak inversion; and iii) the charges coupled through the gate-to-diffusion overlap capacitance, Important observations concerning the weak inversion charge injection have been drawn from the waveform of the current through the switched capacitor, In this work the channel charges in weak inversion have exhibited a 20% contribution to the switch-induced error voltage on a switched capacitor.
引用
收藏
页码:604 / 606
页数:3
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