EFFECTS OF SUBSTRATE-TEMPERATURE ON THE ORIENTATION OF ULTRAHIGH-VACUUM EVAPORATE SI AND GE FILMS

被引：17

作者：

CHAO, SS ^{[1
]}

GONZALEZHERNANDEZ, J ^{[1
]}

MARTIN, D ^{[1
]}

TSU, R ^{[1
]}

机构：

[1] INST FIS & QUIM SAO CARLOS,BR-13560 SAO CARLOS,SP,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1089 / 1091

页数：3

共 50 条

[1] DEPENDENCE OF GRAIN-SIZE ON THE SUBSTRATE-TEMPERATURE OF SI AND GE FILMS PREPARED BY EVAPORATION UNDER ULTRAHIGH-VACUUM
TSU, R
GONZALEZHERNANDEZ, J
CHAO, SS
MARTIN, D
APPLIED PHYSICS LETTERS, 1986, 48 (10) : 647 - 649
[2] EFFECT OF SUBSTRATE-TEMPERATURE ON ULTRAHIGH-VACUUM INTERFACES OF INDIUM OXIDE GAAS(110)
GOLAN, A
SHAPIRA, Y
EIZENBERG, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 567 - 571
[3] CRYSTALLIZATION TEMPERATURE OF ULTRAHIGH-VACUUM DEPOSITED SILICON FILMS
GONZALEZHERNANDEZ, J
MARTIN, D
CHAO, SS
TSU, R
APPLIED PHYSICS LETTERS, 1984, 45 (01) : 101 - 103
[4] Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals
Meyerson, Bernard S.
IBM Journal of Research and Development, 2000, 44 (01) : 132 - 141
[5] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM
TABE, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 534 - 538
[6] INTERNAL-STRESS AND STRUCTURE OF ULTRAHIGH-VACUUM EVAPORATED CHROMIUM AND IRON FILMS AND THEIR DEPENDENCE ON SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE DURING DEPOSITION
THURNER, G
ABERMANN, R
THIN SOLID FILMS, 1990, 192 (02) : 277 - 285
[7] Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition. Process fundamentals
Meyerson, B.S.
1600, (34):
[8] THE EFFECT OF TEMPERATURE ON THE EPITAXIAL QUALITY OF BILAYERS OF IRIDIUM SILICIDE AND SI-GE DEPOSITED ON SI(100) IN ULTRAHIGH-VACUUM
CHUNG, CK
HWANG, J
CHANG, YH
CHEN, WJ
WANG, LP
JOURNAL OF CRYSTAL GROWTH, 1993, 126 (04) : 675 - 681
[9] LOW-TEMPERATURE SI AND SI-GE EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION - PROCESS FUNDAMENTALS
MEYERSON, BS
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (06) : 806 - 815
[10] HETEROEXPITAXIAL GROWTH OF GE ON (100)SI BY ULTRAHIGH-VACUUM, CHEMICAL VAPOR-DEPOSITION
CUNNINGHAM, B
CHU, JO
AKBAR, S
APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3574 - 3576

← 1 2 3 4 5 →