CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION

被引：5
|
作者：
GILES, LF [1 ]
MARSH, CD [1 ]
NEJIM, A [1 ]
HEMMENT, PLF [1 ]
BOOKER, GR [1 ]
机构：
[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 84卷 / 02期
关键词：
D O I：
10.1016/0168-583X(94)95763-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Crystallographic defects present in thermal oxidised SIMOX materials have been studied by means of plan view transmission electron microscopy (TEM) and chemical defect etching. It is observed that the presence of small stacking fault tetrahedra near the top Si/SiO2 interface influence the formation of oxidation induced stacking faults (OISF). An explanation for this behaviour is given based on the assumption that these small crystallographic defects contribute to the recombination of silicon interstitials emitted during thermal oxidation.
引用
收藏
页码：242 / 247
页数：6
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