EFFECTIVE ELECTRON-HOLE POTENTIAL IN POLAR SEMICONDUCTORS

被引：2
|
作者：
IADONISI, G
RAMAGLIA, VM
机构：
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1985年 / 6卷 / 03期
关键词：
D O I：
10.1007/BF02450556
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：193 / 200
页数：8
相关论文
共 50 条
  • [31] ELECTRON-HOLE SCATTERING IN SEMICONDUCTORS AND SEMIMETALS
    JOSHI, P
    YING, SC
    QUINN, JJ
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (04): : 599 - 599
  • [32] SUPERSYMMETRY AND ELECTRON-HOLE EXCITATIONS IN SEMICONDUCTORS
    FERRAZ, A
    VIET, NA
    [J]. PHYSICAL REVIEW B, 1995, 51 (16): : 10548 - 10555
  • [33] ELECTRON-HOLE LIQUID IN LAYERED SEMICONDUCTORS
    ANDRYUSHIN, EA
    SILIN, AP
    [J]. FIZIKA TVERDOGO TELA, 1977, 19 (05): : 1405 - 1409
  • [34] THERMODYNAMICS OF AN ELECTRON-HOLE SYSTEM IN SEMICONDUCTORS
    COMBESCOT, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 86 (01): : 349 - 358
  • [35] THEORY OF ELECTRON-HOLE LIQUID IN SEMICONDUCTORS
    BENI, G
    RICE, TM
    [J]. PHYSICAL REVIEW B, 1978, 18 (02): : 768 - 785
  • [36] Characterization of nonradiative traps by hot electron-hole plasma luminescence dynamics in polar semiconductors
    Jursenas, S
    Tamulaitis, G
    Kurilcik, G
    Zukauskas, A
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (02) : 241 - 243
  • [37] THE EFFECT OF COLLECTIVE ELECTRON-HOLE PLASMA MODES ON CHARGE CARRIER MOBILITY IN POLAR SEMICONDUCTORS
    KASIYAN, AI
    RUSSU, PI
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 128 (01): : 243 - 249
  • [38] Dense electron-hole plasma effects on energy relaxation in highly excited polar semiconductors
    Jursenas, S
    Kurilcik, G
    Zukauskas, A
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 99 - 102
  • [39] EFFECT OF ELECTRON-HOLE INTERACTION ON ELECTRON RELAXATION IN SEMICONDUCTORS
    LYAPILIN, II
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 504 - 506
  • [40] ELECTRON-HOLE PAIR GENERATION AND HYSTERESIS IN SEMICONDUCTORS
    ELCI, A
    SCULLY, MO
    OHARE, JM
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4779 - 4787
12345