Characterization of nonradiative traps by hot electron-hole plasma luminescence dynamics in polar semiconductors

被引：6
|
作者：
Jursenas, S [1 ]
Tamulaitis, G [1 ]
Kurilcik, G [1 ]
Zukauskas, A [1 ]
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2006 Vilnius, Lithuania
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期
关键词：
D O I：
10.1063/1.120697
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Luminescence intensity dependence on excitation intensity has been studied at quasi-steady-state conditions in CdS and CdSe crystals at T=294 K and interpreted, with heating of photoelectrons taken into account. The shape of the dependence indicates a reduction of carrier density due to increased effective temperature. A method for estimating the height of the barrier for centers verning the thermally activated nonradiative capture by multiphonon emission is proposed. The barrier heights of 140 and 170 meV in CdS and CdSe, respectively, have been estimated. (C) 1998 American Institute of Physics.
引用
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页码：241 / 243
页数：3
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