NUCLEAR MICROPROBE APPLICATION TO SEMICONDUCTOR PROCESS-DEVELOPMENT - SILICIDE FORMATION AND MULTILAYERED STRUCTURE

被引：1
|
作者：
TAKAI, M
KATAYAMA, Y
LOHNER, T
KINOMURA, A
RYSSEL, H
TSIEN, PH
BURTE, E
SATOU, M
CHAYAHARA, A
机构：
[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN
[2] FRAUNHOFER ARBEITSGRP INTEGRIERTE SCHALTUNGEN, W-8520 ERLANGEN, GERMANY
[3] GOVT IND RES INST, IKEDA, OSAKA 563, JAPAN
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1994年 / 127卷 / 3-4期
关键词：
NUCLEAR MICROPROBE; RBS TOMOGRAPHY; SILICIDE FORMATION; MULTILAYER STRUCTURE; ION BEAM MIXING; SEMICONDUCTOR;
D O I：
10.1080/10420159408221044
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.
引用
收藏
页码：357 / 365
页数：9
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