NUCLEAR MICROPROBE APPLICATION TO SEMICONDUCTOR PROCESS-DEVELOPMENT - SILICIDE FORMATION AND MULTILAYERED STRUCTURE

被引：1
|
作者：
TAKAI, M
KATAYAMA, Y
LOHNER, T
KINOMURA, A
RYSSEL, H
TSIEN, PH
BURTE, E
SATOU, M
CHAYAHARA, A
机构：
[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN
[2] FRAUNHOFER ARBEITSGRP INTEGRIERTE SCHALTUNGEN, W-8520 ERLANGEN, GERMANY
[3] GOVT IND RES INST, IKEDA, OSAKA 563, JAPAN
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1994年 / 127卷 / 3-4期
关键词：
NUCLEAR MICROPROBE; RBS TOMOGRAPHY; SILICIDE FORMATION; MULTILAYER STRUCTURE; ION BEAM MIXING; SEMICONDUCTOR;
D O I：
10.1080/10420159408221044
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.
引用
收藏
页码：357 / 365
页数：9
相关论文
共 50 条
  • [31] Membrane formation and structure development by dry-cast process
    Matsuyama, H
    Teramoto, M
    Uesaka, T
    JOURNAL OF MEMBRANE SCIENCE, 1997, 135 (02) : 271 - 288
  • [32] DEVELOPMENT AND APPLICATION OF SILICON SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NUCLEAR-POWER-PLANTS
    KITAGUCHI, H
    IZUMI, S
    KAIHARA, A
    MITANI, S
    KUROSU, T
    JOURNAL OF THE ATOMIC ENERGY SOCIETY OF JAPAN, 1990, 32 (07): : 714 - 718
  • [33] Evolutionary process development towards next generation crystalline silicon solar cells: a semiconductor process toolbox application
    John, J.
    Prajapati, V.
    Vermang, B.
    Lorenz, A.
    Allebe, C.
    Rothschild, A.
    Tous, L.
    Uruena, A.
    Baert, K.
    Poortmans, J.
    EPJ PHOTOVOLTAICS, 2012, 3
  • [34] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES
    HAKEN, RA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1657 - 1663
  • [35] Intercalate nanohybrid structure of non-organic/organic semiconductor configuration: formation, properties and application
    Ivashchyshyn, Fedir
    Grygorchak, Ivan
    Stakhira, Pavlo
    Cherpak, Vladyslav
    JOURNAL OF EXPERIMENTAL NANOSCIENCE, 2014, 9 (07) : 678 - 688
  • [36] Application of Computer Technologies for Modeling the Process of Formation of the Porous Structure of Foamed Glass
    E. A. Yatsenko
    B. M. Gol’tsman
    L. A. Yatsenko
    N. S. Karandashova
    V. A. Smolii
    Glass and Ceramics, 2017, 74 : 267 - 269
  • [37] Application of Computer Technologies for Modeling the Process of Formation of the Porous Structure of Foamed Glass
    Yatsenko, E. A.
    Gol'tsman, B. M.
    Yatsenko, L. A.
    Karandashova, N. S.
    Smolii, V. A.
    GLASS AND CERAMICS, 2017, 74 (7-8) : 267 - 269
  • [38] Axisymmetric analysis of multilayered thermoelastic media with application to a repository for heat-emitting high-level nuclear waste in a geological formation
    Yang, Yang
    Datcheva, Maria
    Schanz, Tom
    GEOPHYSICAL JOURNAL INTERNATIONAL, 2016, 206 (02) : 1144 - 1161
  • [39] Application of the model of locally nonequilibrium solidification to the process of structure formation in alloys rapidly quenched by spinning
    P. K. Galenko
    M. D. Krivilev
    B. I. Lad’yanov
    M. V. Osetrov
    Crystallography Reports, 2001, 46 : 310 - 311
  • [40] Application of the model of locally nonequilibrium solidification to the process of structure formation in alloys rapidly quenched by spinning
    Galenko, PK
    Krivilev, MD
    Lad'yanov, BI
    Osetrov, MV
    CRYSTALLOGRAPHY REPORTS, 2001, 46 (02) : 310 - 311
12345