Application of medium energy nuclear microprobe to semiconductor process steps

被引：17
|
作者：
Takai, M
Kishimoto, T
Mimura, R
Sawaragi, H
Aihara, R
机构：
[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN
[2] EIKO ENGN CO LTD, NAKAMINATO, IBARAKI 31112, JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 118卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(96)00250-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A compact nuclear microprobe system with a eutectic-alloy (AuSiBe) LMIS (liquid metal ion source) and integrated focusing optics in the accelerating column, having a maximum accelerating voltage of 200 kV, has been installed. A Be2+ microprobe at 300 keV has a minimum beam spot diameter of 80 nm at 47 pA. The microprobe could easily resolve miniaturized structures with a feature size of less than 1 mu m. Channeling contrast microscopy (CCM) analysis using the microprobe in localized implanted areas in Si could clearly indicate localized damage areas in a few min.
引用
收藏
页码：418 / 422
页数：5
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