CHEMICAL HYDRODYNAMICS OF GROWTH OF EPITAXIAL SILICON LAYERS

被引:0
|
作者
PROKOPEV, EP
机构
来源
关键词
D O I
暂无
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1535 / 1536
页数:2
相关论文
共 50 条
  • [21] Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates
    Van Huy Nguyen
    Dobbie, A.
    Myronov, M.
    Norris, D. J.
    Walther, T.
    Leadley, D. R.
    [J]. THIN SOLID FILMS, 2012, 520 (08) : 3222 - 3226
  • [22] Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
    Zhao Danmei
    Zhao Degang
    Jiang Desheng
    Liu Zongshun
    Zhu Jianjun
    Chen Ping
    Liu Wei
    Li Xiang
    Shi Ming
    [J]. JOURNAL OF SEMICONDUCTORS, 2015, 36 (06)
  • [23] Effect of growth conditions on formation of grain boundaries in epitaxial silicon layers
    G. S. Konstantinova
    V. N. Lozovskii
    [J]. Crystallography Reports, 2002, 47 : 340 - 344
  • [25] Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
    赵丹梅
    赵德刚
    江德生
    刘宗顺
    朱建军
    陈平
    刘炜
    李翔
    侍铭
    [J]. Journal of Semiconductors, 2015, (06) : 25 - 28
  • [26] THE GROWTH AND CHARACTERIZATION OF EPITAXIAL INSULATING HOF3 LAYERS ON SILICON
    GRIFFITHS, CL
    MACDONALD, JE
    WILLIAMS, RH
    [J]. APPLIED SURFACE SCIENCE, 1992, 56-8 : 782 - 788
  • [27] Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
    赵丹梅
    赵德刚
    江德生
    刘宗顺
    朱建军
    陈平
    刘炜
    李翔
    侍铭
    [J]. Journal of Semiconductors, 2015, 36 (06) : 25 - 28
  • [28] Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates
    Sanchez-Garcia, M. A.
    Grandal, J.
    Calleja, E.
    Lazic, S.
    Calleja, J. M.
    Trampert, A.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1490 - 1493
  • [29] GROWTH OF EPITAXIAL LAYERS OF SILICON BY SUBLIMATION THROUGH THIN ALLOY ZONES
    FILBY, JD
    NIELSEN, S
    [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (01): : 81 - &
  • [30] GROWTH OF EPITAXIAL LAYERS OF GALLIUM NITRIDE ON SILICON CARBIDE AND CORUNDUM SUBSTRATES
    WICKENDEN, DK
    FAULKNER, KR
    BRANDER, RW
    ISHERWOO.J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 158 - +