DEEP LEVELS IN GAAS BEFORE AND AFTER SILICON IMPLANTATION

被引：0
|
作者：
DINDO, S [1 ]
ABDELMOTALEB, IM [1 ]
LOWE, K [1 ]
YOUNG, L [1 ]
机构：
[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C219 / C219
页数：1
相关论文
共 50 条
  • [21] Deep states in silicon δ-doped GaAs
    Aleshkin, VY
    Danil'tsev, VM
    Murel', AV
    Khrykin, OI
    Shashkin, VI
    [J]. SEMICONDUCTORS, 1998, 32 (06) : 659 - 664
  • [22] Deep states in silicon δ-doped GaAs
    V. Ya. Aleshkin
    V. M. Danil’tsev
    A. V. Murel’
    O. I. Khrykin
    V. I. Shashkin
    [J]. Semiconductors, 1998, 32 : 659 - 664
  • [23] Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
    Rybar, J.
    Stuchlikova, L'
    Petrus, M.
    Harmatha, L.
    Sciana, B.
    Radziewicz, D.
    Pucicki, D.
    Tlaczala, M.
    [J]. NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 103 - 106
  • [24] OPTICAL CHARACTERIZATION OF DEEP LEVELS IN GAAS
    TAJIMA, M
    [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 119 - 126
  • [25] DEEP LEVELS IN GAAS PREPARED BY VPE
    BABINSKI, A
    BARANOWSKI, JM
    CZUB, M
    [J]. ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 335 - 338
  • [26] CAPACITANCE SPECTROSCOPY OF DEEP LEVELS FORMED IN SILICON AFTER DIFFUSION OF SULFUR
    LEBEDEV, AA
    LEBEDEV, AA
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1376 - 1377
  • [27] DETERMINATION OF DEEP TRAP LEVELS IN SILICON USING ION-IMPLANTATION AND CV-MEASUREMENTS
    SCHULZ, M
    [J]. APPLIED PHYSICS, 1974, 4 (03): : 225 - 236
  • [28] DEEP LEVELS IN EPITAXIAL SILICON
    REDFIELD, D
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 257 - 257
  • [29] DEEP LEVELS IN IMPURE SILICON
    CHENG, LJ
    LEUNG, DC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C111 - C111
  • [30] DEEP LEVELS OF PLATINUM IN SILICON
    SANDOW, PM
    DAS, MB
    STACH, J
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 687 - 703
12345