Deep states in silicon δ-doped GaAs

被引：3

作者：

Aleshkin, VY ^{[1
]}

Danil'tsev, VM ^{[1
]}

Murel', AV ^{[1
]}

Khrykin, OI ^{[1
]}

Shashkin, VI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 06期

关键词：

D O I：

10.1134/1.1187460

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The density and electron trapping cross section of deep states in silicon delta-doped GaAs were investigated by means of measurements of the voltage and temperature dependences of the impedance of a Schottky contact to the structure. It was observed that density-of-states tails appear in the band gap when the silicon density in the delta-layer exceeds 6 x 10(12) cm(-2). In our structures the energy characterizing the penetration depth of a tail was in the range 20-100 meV. The characteristic electron trapping cross section of deep states in delta-layers was of the order of 10(-17) cm(2). It was shown that saturation of the electron density in the delta-layer with increasing Si density is due to self-compensation of Si. (C) 1998 American Institute if Physics.

引用

页码：659 / 664

页数：6

共 50 条

[1] Deep states in silicon δ-doped GaAs
V. Ya. Aleshkin
V. M. Danil’tsev
A. V. Murel’
O. I. Khrykin
V. I. Shashkin
[J]. Semiconductors, 1998, 32 : 659 - 664
[2] DX STATES IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES DOPED SELECTIVELY WITH SILICON
JEANJEAN, P
SICART, J
ROBERT, JL
PLANEL, R
MOLLOT, F
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (11) : 1977 - 1984
[3] LOCAL DENSITY OF STATES OF SILICON IMPURITY IN LIGHTLY AND HEAVILY DOPED ALAS/GAAS SUPERLATTICES
WANG, EG
ZHANG, LY
WANG, HY
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (03): : 371 - 375
[4] SILICON DONOR STATES IN HEAVILY DOPED THIN GAAS-ALAS(001) SUPERLATTICES
NELSON, JS
FONG, CY
BATRA, IP
PICKETT, WE
KLEIN, BM
[J]. PHYSICAL REVIEW B, 1988, 37 (17): : 10203 - 10211
[5] DEEP STATES IN GAAS LEC CRYSTALS
HENINI, M
TUCK, B
PAULL, CJ
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (05) : 483 - 488
[6] DEEP LEVELS IN INDIUM-DOPED GAAS
KAMINSKI, P
NIZINKI, Z
MATERNA, A
[J]. ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 331 - 333
[7] PHOTOCONDUCTIVITY OF SILICON DOPED WITH DEEP IIMPURITIES
GLINCHUK, KD
DENISOVA, AD
LITOVCHE.NM
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (12): : 2963 - &
[8] Microscopic behavior of silicon in silicon delta-doped layer in GaAs
Grandidier, B
Stievenard, D
Nys, JP
Wallart, X
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2454 - 2456
[9] METASTABLE AND NONMETASTABLE DEEP STATES OF GE IN GAAS
SKIERBISZEWSKI, C
SUSKI, T
WISNIEWSKI, P
JANTSCH, W
OSTERMAYER, G
WILAMOWSKI, Z
WALKER, PG
MASON, NJ
SINGLETON, J
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (23) : 3209 - 3211
[10] PHOTOELECTROCHEMISTRY OF SILICON-DELTA-DOPED GAAS STRUCTURES
KUCERNAK, ARJ
PEAT, R
WILLIAMS, DE
KOENRAAD, PM
LEYS, M
WOLTER, JH
[J]. ELECTROCHIMICA ACTA, 1994, 39 (03) : 355 - 361

← 1 2 3 4 5 →