DEEP LEVELS IN GAAS BEFORE AND AFTER SILICON IMPLANTATION

被引：0
|
作者：
DINDO, S [1 ]
ABDELMOTALEB, IM [1 ]
LOWE, K [1 ]
YOUNG, L [1 ]
机构：
[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C219 / C219
页数：1
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