THEORETICAL-MODEL FOR SELF-INTERSTITIAL GENERATION AT THE SI/SIO2 INTERFACE DURING THERMAL-OXIDATION OF SILICON

被引：65
|
作者：
TANIGUCHI, K
SHIBATA, Y
HAMAGUCHI, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 07期
关键词：
D O I：
10.1063/1.342759
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2723 / 2727
页数：5
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