SOME PROPERTIES OF ALUMINUM-NITRIDE POWDER PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引:10
|
作者
KUBO, K [1 ]
ITATANI, K [1 ]
HOWELL, FS [1 ]
KISHIOKA, A [1 ]
KINOSHITA, M [1 ]
机构
[1] SOPHIA UNIV, FAC SCI & ENGN, DEPT CHEM, CHIYODA KU, TOKYO 102, JAPAN
关键词
D O I
10.1016/0955-2219(95)00039-W
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ultrafine aluminium-nitride (AlN) powders with primary particle sizes of 10-20 nm were prepared by a metal-organic chemical vapour deposition (MOCVD): trimethylaluminium (Al(CH3)(3)), triethylaluminium (Al(C2H5)(3)) and triisobutylaluminium (Al(i-C4H9)(3))-vapours were reacted with ammonia (NH3) at 1050 degrees C. the sintered compacts with relative densities of similar to 95% could be fabricated by firing these compressed powders at temperatures as low as 1600 degrees C. The relative densities of the Al(CH3)(3)-derived and Al(C2H5)(3)-derived compacts fired at 1800 degrees C for 10 h attained similar to 98%. the oxygen contents of these compacts were 1.8 and 4.7%, respectively.
引用
收藏
页码:661 / 666
页数:6
相关论文
共 50 条
  • [21] A KINETIC-MODEL FOR THE GROWTH OF ZNTE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    DUMONT, H
    QUHEN, B
    MARBEUF, A
    BOUREE, JE
    GOROCHOV, O
    APPLIED ORGANOMETALLIC CHEMISTRY, 1994, 8 (02) : 87 - 93
  • [22] THE INFLUENCE OF DEPOSITS IN A METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION APPARATUS ON THE STABILITY OF PRECURSORS
    LANG, FR
    DAHMEN, KH
    THIN SOLID FILMS, 1994, 241 (1-2) : 378 - 382
  • [23] Effect of process parameters on synthesis of aluminum nitride powder prepared by chemical vapor deposition
    Moo-Chin Wang
    Ming-Sung Tsai
    Nan-Chung Wu
    Journal of Materials Science, 2001, 36 : 3283 - 3289
  • [24] Effect of process parameters on synthesis of aluminum nitride powder prepared by chemical vapor deposition
    Wang, MC
    Tsai, MS
    Wu, NC
    JOURNAL OF MATERIALS SCIENCE, 2001, 36 (13) : 3283 - 3289
  • [25] EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP/GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    DIAZ, J
    YI, HJ
    ERDTMANN, M
    HE, X
    KOLEV, E
    GARBUZOV, D
    BIGAN, E
    RAZEGHI, M
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 700 - 704
  • [26] SOME PROPERTIES OF ALUMINUM NITRIDE POWDER SYNTHESIZED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    ITATANI, K
    SANO, K
    HOWELL, FS
    KISHIOKA, A
    KINOSHITA, M
    JOURNAL OF MATERIALS SCIENCE, 1993, 28 (06) : 1631 - 1638
  • [27] Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane
    Yun, JH
    Kim, BY
    Rhee, SW
    THIN SOLID FILMS, 1998, 312 (1-2) : 259 - 264
  • [28] GROWTH OF ORIENTED ALUMINUM NITRIDE FILMS ON SILICON BY CHEMICAL-VAPOR-DEPOSITION
    KHAN, AH
    ODEH, MF
    MEESE, JM
    CHARLSON, EM
    CHARLSON, EJ
    STACY, T
    POPOVICI, G
    PRELAS, MA
    WRAGG, JL
    JOURNAL OF MATERIALS SCIENCE, 1994, 29 (16) : 4314 - 4318
  • [29] CLUSTER-SIZE DETERMINATION IN THE CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM NITRIDE
    EGASHIRA, Y
    KIM, HJ
    KOMIYAMA, H
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (08) : 2009 - 2016
  • [30] STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
    YAMAGUCHI, H
    LESAICHERRE, PY
    SAKUMA, T
    MIYASAKA, Y
    ISHITANI, A
    YOSHIDA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B): : 4069 - 4073