DEFECT CONTROL IN SI3N4/SI3N4/SIO2 STRUCTURES FOR ISOLATION PROCESSES

被引：0
|
作者：
CLAEYS, C
LEUVEN, KV
VANHELLEMONT, J
DECLERCK, G
VANLANDUYT, J
VANOVERSTRAETEN, R
AMELINCKX, S
机构：
[1] CATHOLIC UNIV LEUVEN,ESAT,B-3030 HEVERLE,BELGIUM
[2] ANTWERP STATE UNIV CTR,B-2020 ANTWERP,BELGIUM
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C84 / C84
页数：1
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