INTERFACE FORMATION AND ELECTRONIC-STRUCTURE OF PECVD SIO2-INSB STRUCTURES

被引：5
|
作者：
VALCHEVA, EP
GERMANOVA, KG
机构：
[1] Sofia University, Department of Solid State Physics and Microelectronics, Sofia, 1126
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 03期
关键词：
D O I：
10.1016/0749-6036(91)90335-O
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
SiO2 layers are formed on InSb substrates by plasma enhanced chemical vapour deposition [PECVD] technique at different substrate temperatures with the purpose to clarify the chemical composition and bonding properties of the transitional region between SiO2 layer and InSb substrate. Different diagnostic techniques have been utilized, including Auger electron spectroscopy, ellipsometry and I - V measurements. Correlation between the electrical properties of SiO2 InSb structures and the chemical composition and formation process of their interface region is established. A model, explaining the influence of the native oxide in the interface region of the structures on their properties, is worked out. © 1991.
引用
收藏
页码：319 / 322
页数：4
相关论文
共 50 条
  • [21] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE
    DISTEFANO, TH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 856 - 859
  • [22] ELECTRONIC-STRUCTURE OF DEFECTS AT SI-SIO2 INTERFACES
    HERMAN, F
    KASOWSKI, RV
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 395 - 401
  • [23] ELECTRONIC-STRUCTURE AND PROPERTIES OF SIO2 AND RELATED COMPOUNDS
    PANTELIDES, ST
    HARRISON, WA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 365 - 365
  • [24] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE
    SALEHPOUR, MR
    SATPATHY, S
    DAS, GP
    PHYSICAL REVIEW B, 1991, 44 (16): : 8880 - 8885
  • [25] ELECTRONIC-STRUCTURE AND FORMATION OF MOSI2 SILICIDES
    LI, BQ
    JI, MR
    WU, JX
    HSU, CC
    YIAN, J
    CHINESE PHYSICS-ENGLISH TR, 1990, 10 (02): : 481 - 487
  • [26] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE
    RIEGER, D
    HIMPSEL, FJ
    KARLSSON, UO
    MCFEELY, FR
    MORAR, JF
    YARMOFF, JA
    PHYSICAL REVIEW B, 1986, 34 (10): : 7295 - 7306
  • [27] PHOTOEMISSION-STUDY OF THE SURFACE ELECTRONIC-STRUCTURE OF INSB(110)
    HOCHST, H
    HERNANDEZCALDERON, I
    PHYSICAL REVIEW B, 1984, 30 (08): : 4528 - 4532
  • [28] A NOVEL SELF-CONSISTENT THEORY OF THE ELECTRONIC-STRUCTURE OF INVERSION-LAYERS IN INSB MIS STRUCTURES
    ZOLLNER, JP
    UBENSEE, H
    PAASCH, G
    FIEDLER, T
    GOBSCH, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 134 (02): : 837 - 845
  • [29] ATOMIC AND ELECTRONIC-STRUCTURE FORMATION AT THE METAL-CD1-XMNXTE INTERFACE
    BUZANEVA, EV
    VETROV, AP
    POPOVA, GD
    STRIKHA, VI
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (04) : 479 - 483
  • [30] ELECTRONIC-STRUCTURE OF SIO2(111) THIN-FILM
    CIRACI, S
    ELLIALTIOGLU, S
    SOLID STATE COMMUNICATIONS, 1981, 40 (05) : 587 - 589
12345