PHOTOEMISSION-STUDY OF THE SURFACE ELECTRONIC-STRUCTURE OF INSB(110)

被引：15
|
作者：
HOCHST, H [1 ]
HERNANDEZCALDERON, I [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.30.4528
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4528 / 4532
页数：5
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