INTERFACE FORMATION AND ELECTRONIC-STRUCTURE OF PECVD SIO2-INSB STRUCTURES

被引：5
|
作者：
VALCHEVA, EP
GERMANOVA, KG
机构：
[1] Sofia University, Department of Solid State Physics and Microelectronics, Sofia, 1126
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 03期
关键词：
D O I：
10.1016/0749-6036(91)90335-O
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
SiO2 layers are formed on InSb substrates by plasma enhanced chemical vapour deposition [PECVD] technique at different substrate temperatures with the purpose to clarify the chemical composition and bonding properties of the transitional region between SiO2 layer and InSb substrate. Different diagnostic techniques have been utilized, including Auger electron spectroscopy, ellipsometry and I - V measurements. Correlation between the electrical properties of SiO2 InSb structures and the chemical composition and formation process of their interface region is established. A model, explaining the influence of the native oxide in the interface region of the structures on their properties, is worked out. © 1991.
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页码：319 / 322
页数：4
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