Spectroscopic studies of native oxide formation on a SiO2-InSb interface

被引：1
|
作者：
Valcheva, E
机构：
[1] Faculty of Physics, St. Kl. Ohridski University of Sofia
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 05期
关键词：
D O I：
10.1116/1.580915
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Parallel investigations of Raman scattering and spectroscopic ellipsometry of plasma-enhanced chemical vapor deposited SiO2 on InSb was carried out. The purpose was to obtain more comprehensive information about the structure and composition of the deposited layers. These consist of stoichiometric and homogeneous SiO2. An interface layer of a significant thickness of 130 Angstrom whose optical constants differ from those of the basic film is observed. The interlayer is composed of sublayers as a result of a chemical reaction of the InSb natural surface oxide and the plasma environment during deposition. (C) 1997 American Vacuum Society.
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页码：2489 / 2491
页数：3
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