EPITAXIAL DEPOSITION OF GERMANIUM ON GALLIUM ARSENIDE BY DECOMPOSITION OF GERMANE

被引:0
|
作者
ZANOWICK, RL
机构
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C186 / &
相关论文
共 50 条
  • [41] DETERMINATION OF ARSENIC IN SILICON GERMANIUM AND GALLIUM ARSENIDE
    TUMANOV, AA
    SIDORENK.AN
    TARADENK.FS
    INDUSTRIAL LABORATORY, 1965, 30 (06): : 825 - &
  • [42] MECHANICAL STRESSES IN HETEROSYSTEM GERMANIUM GALLIUM ARSENIDE
    DATSENKO, LI
    KLIMENKO, AP
    MATVEYEVA, LA
    PROKOPENKO, IV
    TKHORIK, YA
    THIN SOLID FILMS, 1976, 33 (03) : 275 - 280
  • [43] SELECTIVE GROWTH OF EPITAXIAL SILICON AND GALLIUM ARSENIDE
    RAICHOUDHURY, P
    SCHRODER, DK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 107 - +
  • [44] EPITAXIAL GROWTH OF ZINC SELENIDE ON GALLIUM ARSENIDE
    BOUGNOT, G
    ETIENNE, D
    CHEVRIER, J
    BOHE, C
    MATERIALS RESEARCH BULLETIN, 1971, 6 (03) : 145 - &
  • [45] ELECTRICAL PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE FILMS
    LISENKER, BS
    MARONCHU.IE
    MARONCHU.YE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 770 - &
  • [46] Electrodeposition of epitaxial CdSe on (111) gallium arsenide
    Cachet, H
    Cortès, R
    Froment, M
    Etcheberry, A
    THIN SOLID FILMS, 2000, 361 : 84 - 87
  • [47] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
    BOUCHER, A
    EASTON, BC
    PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 380 - 384
  • [48] PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS
    PARENTEAU, M
    WU, FM
    JORIO, A
    CARLONE, C
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5185 - 5190
  • [49] SMALL ETCH PITS IN EPITAXIAL GALLIUM ARSENIDE
    IVLEVA, OM
    YAKUBENY.MP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (01): : 148 - &
  • [50] BEHAVIOR OF GERMANIUM IMPURITY IN EPITAXIAL GALLIUM-ARSENIDE LAYERS GROWN OUT OF THE GAS-PHASE
    VILISOVA, MD
    BOBROVNIKOVA, IA
    IVLEVA, OM
    POROKHOVNICHENKO, LP
    RYAZANOV, VN
    YAKUBENYA, MP
    INORGANIC MATERIALS, 1990, 26 (08) : 1505 - 1507