首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
EPITAXIAL DEPOSITION OF GERMANIUM ON GALLIUM ARSENIDE BY DECOMPOSITION OF GERMANE
被引:0
|
作者
:
ZANOWICK, RL
论文数:
0
引用数:
0
h-index:
0
ZANOWICK, RL
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1965年
/ 112卷
/ 08期
关键词
:
D O I
:
暂无
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:C186 / &
相关论文
共 50 条
[21]
GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 283
-
287
[22]
EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE
RAICHOUDBURY, P
论文数:
0
引用数:
0
h-index:
0
RAICHOUDBURY, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(12)
: 1745
-
+
[23]
MULTIPLE TWINS IN EPITAXIAL GALLIUM ARSENIDE
HOLLOWAY, H
论文数:
0
引用数:
0
h-index:
0
HOLLOWAY, H
BOBB, LC
论文数:
0
引用数:
0
h-index:
0
BOBB, LC
JOURNAL OF APPLIED PHYSICS,
1967,
38
(06)
: 2711
-
&
[24]
Use of epitaxial gallium arsenide in detectors
V. M. Zaletin
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
V. M. Zaletin
Yu. V. Tuzov
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
Yu. V. Tuzov
V. F. Dvoryankin
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
V. F. Dvoryankin
A. A. Sokolovskii
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
A. A. Sokolovskii
Atomic Energy,
2007,
103
: 901
-
905
[25]
EPITAXIAL GALLIUM-ARSENIDE GROWTH
不详
论文数:
0
引用数:
0
h-index:
0
不详
ELECTRONIC ENGINEERING,
1979,
51
(627):
: 10
-
10
[26]
EPITAXIAL GALLIUM ARSENIDE THIN FILMS
STEINBER.RF
论文数:
0
引用数:
0
h-index:
0
STEINBER.RF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1966,
3
(05):
: 315
-
&
[27]
PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE
MARUYAMA, M
论文数:
0
引用数:
0
h-index:
0
MARUYAMA, M
KIKUCHI, S
论文数:
0
引用数:
0
h-index:
0
KIKUCHI, S
HASEGAWA, F
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, F
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: C66
-
&
[28]
EPITAXIAL GALLIUM ARSENIDE THIN FILMS
STEINBER.RF
论文数:
0
引用数:
0
h-index:
0
STEINBER.RF
VACUUM,
1967,
17
(03)
: 171
-
&
[29]
Use of epitaxial gallium arsenide in detectors
Zaletin, V. M.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Zaletin, V. M.
Tuzov, Yu. V.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Tuzov, Yu. V.
Dvoryankin, V. F.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Radio Engn & Elect, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Dvoryankin, V. F.
Sokolovskii, A. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Radio Engn & Elect, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Sokolovskii, A. A.
ATOMIC ENERGY,
2007,
103
(05)
: 901
-
905
[30]
GROWTH RATES OF EPITAXIAL GALLIUM ARSENIDE
GOLDSMITH, N
论文数:
0
引用数:
0
h-index:
0
GOLDSMITH, N
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 588
-
589
←
1
2
3
4
5
→