DOMINANCE OF SURFACE RECOMBINATION CURRENT IN PLANAR, BE-IMPLANTED GAAS P-N-JUNCTIONS PREPARED BY RAPID THERMAL ANNEALING

被引：6
|
作者：
DELYON, TJ
CASEY, HC
TIMMONS, ML
HUTCHBY, JA
DIETRICH, DH
机构：
[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709
[2] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期
关键词：
D O I：
10.1063/1.97681
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1903 / 1905
页数：3
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