INFLUENCE OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS P-N-JUNCTIONS

被引：1
|
作者：
DELYON, TJ
CASEY, HC
MASSOUD, HZ
TIMMONS, ML
HUTCHBY, JA
DIETRICH, HB
机构：
[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709
[2] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期
关键词：
D O I：
10.1063/1.99544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2244 / 2246
页数：3
相关论文
共 50 条
  • [1] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS
    HELIX, MJ
    VAIDYANATHAN, KV
    STREETMAN, BG
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 426 - 429
  • [2] DOMINANCE OF SURFACE RECOMBINATION CURRENT IN PLANAR, BE-IMPLANTED GAAS P-N-JUNCTIONS PREPARED BY RAPID THERMAL ANNEALING
    DELYON, TJ
    CASEY, HC
    TIMMONS, ML
    HUTCHBY, JA
    DIETRICH, DH
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1903 - 1905
  • [3] ELECTRICAL CHARACTERISTICS OF BE-IMPLANTED GAAS ACTIVATED BY RAPID THERMAL ANNEALING
    MAEZAWA, K
    OE, K
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 13 - 15
  • [4] ELECTRICAL-PROPERTIES OF HGCDMNTE P-N-JUNCTIONS
    PLACZEKPOPKO, E
    DUDZIAK, E
    JEDRAL, L
    KASPRAZAK, JF
    PAWLIKOWSKI, JM
    [J]. INFRARED PHYSICS, 1989, 29 (05): : 903 - 905
  • [5] ELECTRICAL CHARACTERISTICS OF BE-IMPLANTED GAAS ACTIVATED BY RAPID THERMAL ANNEALING.
    Maezawa, Koichi
    Oe, Kunishige
    [J]. Electron device letters, 1986, EDL-7 (01): : 13 - 15
  • [6] ELECTRICAL-PROPERTIES OF IMPLANTED AND RAPID THERMAL ANNEALED SHALLOW P+-N JUNCTIONS
    OZGUZ, VH
    WORTMAN, JJ
    HAUSER, JR
    SIMPSON, L
    LITTLEJOHN, MA
    CHU, WK
    ROZGONYI, GA
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1225 - 1226
  • [7] ELECTRICAL-PROPERTIES OF GA-IMPLANTED SI P+-N SHALLOW JUNCTIONS FABRICATED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING
    LIN, CM
    STECKL, AJ
    CHOW, TP
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 594 - 597
  • [8] ELECTRICAL-PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GAAS
    GRNO, J
    [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 193 - 195
  • [9] ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS1-XPX
    CHATTERJEE, PK
    MCLEVIGE, WV
    STREETMAN, BG
    [J]. SOLID-STATE ELECTRONICS, 1976, 19 (11) : 961 - 964
  • [10] ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES AND P-N-JUNCTIONS
    POLYAKOV, AY
    STAM, M
    MILNES, AG
    SCHLESINGER, TE
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (04): : 337 - 343
12345